Elsevier

Organic Electronics

Volume 11, Issue 2, February 2010, Pages 195-201
Organic Electronics

Heteroepitaxy growth high performance films of perylene diimide derivatives

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Abstract

High performance films of phenyl substituted perylene diimide are obtained by heteroepitaxy growth through Weak Epitaxy Growth technique. As epitaxially grown on the para-sexiphenyl (p-6P) ordered layers, the N,N′-di-phenyl perylene tetracarboxylic diimide (PTCDI-Ph) grows to form continuous and highly oriented films with large grain size, which possess low density of grain boundary and smooth surface. This quality films bring about improvement of two orders of magnitude in mobility compare to the traditional films, and present relative good air stability. Ambipolar transport behavior was also observed as tuning the thickness of p-6P.

Keywords

Organic semiconductor films
Perylene diimide derivatives
Heteroepitaxy
Organic thin film transistors
Weak epitaxy growth
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